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mmrf2007n MMRF2007GN 1 rf device data freescale semiconductor, inc. rf ldmos wideband integrated power amplifiers the mmrf2007n wideband integrated circuit is designed with on--chip pre--matching that makes it usable from 136 to 940 mhz. this multi--stage structure is rated for 26 to 32 v operation, has a 2--stage design with off--chip matching for the input and covers all typical modulation formats. this device is ideal for use in military and commercial vhf and uhf radio base station or radar driver applications. typical two--tone performance: v dd1 =28vdc,v dd2 =25vdc, i dq1(a+b) =60ma,i dq2(a+b) = 550 ma, p out =35wavg. frequency g ps (db) pae (%) imd (dbc) 850 mhz 30.6 40.1 ?30.5 900 mhz 31.9 42.4 ?31.0 940 mhz 32.6 42.1 ?31.3 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 137 w cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness features ? characterized with series equivalent large--signal impedance parameters and common source s--parameters ? on--chip prematching. on--chip stabilization. ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection figure 1. functional block diagram figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. rf in2a gnd rf out2a / v d2a 2 3 4 5 8 9 16 10 11 12 rf out1a /v d1a gnd v g1a rf out2b / v d2b 15 7 13 (top view) 6 1 14 rf in2a rf in1a rf out2a /v d2a rf out2b /v d2b rf out1a /v d1a v g1a v g2a rf out1b /v d1b v g1b rf in1b v g2b rf in2b quiescent current temperature compensation (1) quiescent current temperature compensation (1) rf in1a v g2a v g2b rf in1b v g1b gnd gnd rf out1b /v d1b rf in2b 1. refer to an1977 , quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987 , quiescent current control for the rf integrated circuit device family. go to http://www.freescale.com/rf and search for an1977 or an1987. document number: mmrf2007n rev. 0, 6/2015 freescale semiconductor technical data 136?940 mhz, 35 w avg., 28 v rf ldmos wideband integrated power amplifiers mmrf2007n MMRF2007GN to--270wbl--16 plastic mmrf2007n to--270wblg--16 plastic MMRF2007GN ? freescale semiconductor, inc., 2015. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mmrf2007n MMRF2007GN table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +70 vdc gate--source voltage v gs ?0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c input power p in 30 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit final application thermal resistance, junction to case case temperature 80 ? c, 35 w avg. two--tone stage 1, 28 vdc, i dq1(a+b) = 60 ma, f1 = 939.9 mhz, f2 = 940.1 mhz stage 2, 25 vdc, i dq2(a+b) = 550 ma, f1 = 939.9 mhz, f2 = 940.1 mhz r ? jc 2.9 0.6 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a, passes 250 v machine model (per eia/jesd22--a115) a, passes 50 v charge device model (per jesd22--c101) i, passes 100 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics (4) zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 1 ? on characteristics (4) gate threshold voltage (v ds =10vdc,i d =40 ? adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1(a+b) =60madc) v gs(q) ? 3.1 ? vdc fixture gate quiescent voltage (v dd1 =28vdc,i dq1(a+b) = 60 madc, measured in functional test) v gg(q) 9.0 10.0 11.0 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. side a and side b are tied together for this measurement. (continued)
mmrf2007n MMRF2007GN 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics (1) zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 2 ? on characteristics (1) gate threshold voltage (v ds =10vdc,i d = 320 ? adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =25vdc,i dq2(a+b) = 550 madc) v gs(q) ? 3.1 ? vdc fixture gate quiescent voltage (v dd2 =25vdc,i dq2(a+b) = 550 madc, measured in functional test) v gg(q) 7.6 8.6 9.6 vdc drain--source on--voltage (v gs =10vdc,i d =3.2adc) v ds(on) 0.1 0.48 1.2 vdc functional tests (1,2,3) (in freescale test fixture, 50 ohm system) v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma,i dq2(a+b) = 550 ma, p out = 35 w avg., f1 = 939.9 mhz, f2 = 940.1 mhz power gain g ps 31.5 32.6 36.5 db power added efficiency pae 40.5 42.1 ? % intermodulation distortion imd ? ?31.3 ?29.0 dbc typical performance (1) (in freescale test fixture, 50 ohm system) v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma, i dq2(a+b) = 550 ma, 850?940 mhz bandwidth characteristic symbol min typ max unit p out @ 1 db compression point, cw p1db ? 79 ? w imd symmetry @ 71 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 22 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 50 ? mhz quiescent current accuracy over temperature stage 1 with 8.25 k ? gate feed resistors (?30 to 85 ? c) (4) stage 2 ? i qt ? ? 5.03 4.61 ? ? % gain flatness in 90 mhz bandwidth @ p out =35wavg. g f ? 1.2 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.03 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.005 ? db/ ? c table 6. ordering information device tape and reel information package mmrf2007nr1 r1 suffix = 500 units, 44 mm tape width, 13--inch reel to--270wbl--16 MMRF2007GNr1 to--270wblg--16 1. side a and side b are tied together for this measurement. 2. part internally matched both on input and output. 3. measurements made with device in straight lead c onfiguration before any lead forming operation is applied. lead forming is used for gull wing (gn) parts. 4. refer to an1977 , quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987 , quiescent current control for the rf integrated circuit device family. go to http://www.freescale.com/rf and search for an1977 or an1987.
4 rf device data freescale semiconductor, inc. mmrf2007n MMRF2007GN figure 3. mmrf2007n test circuit component layout c1 c2 z1 r1 c3 c4 r2 l1 c7 c6 r3 l2 c8 c14 c10 c5 c9 c13 l4 l3 c12 c11 c15 c16 c18 c17 r5 r4 c20 c19 r6 r7 c36 c35 z2 r10 r9 r8 c33 c34 l6 l5 c28 c27 c29 c31 c32 c30 c23 c25 c26 c24 c21 c22 cut out area v dd1a v dd1b v gg2b v gg2a v gg1a v gg1b v dd2b v dd2a table 7. mmrf2007n test circuit c omponent designations and values part description part number manufacturer c1, c2, c35, c36 10 ? f, 50 v chip capacitors grm55dr61h106ka88l murata c3, c4, c9, c10 1 ? f, 50 v chip capacitors grm31mr71h105ka88l murata c5, c6 3.3 pf chip capacitors atc600f3r3bt250xt atc c7, c8, c27, c28, c33, c34 39 pf chip capacitors atc600f390jt250xt atc c11, c12 47 pf chip capacitors atc600s470jt250xt atc c13, c14 4.7 pf chip capacitors atc600s4r7jt250xt atc c15, c16, c19, c20 0.1 ? f, 50 v chip capacitors grm188r71c104k01d murata c17, c18 5.6 pf chip capacitors atc600s5r6jt250xt atc c21, c22 15 pf chip capacitors atc600f150jt250xt atc c23, c24, c25, c26 4.7 pf chip capacitors atc600f4r7bt250xt atc c29. c30, c31, c32 2.7 pf chip capacitors atc600f2r7bt250xt atc l1, l2, l5, l6 5.0 nh 2 turn inductors a02tklc coilcraft l3, l4 2.8 nh chip inductors 0805cs--020xjlc coilcraft r1 51 ? , 1/8 w chip resistor sg73p2attd51r0f koa speer r2, r3, r8, r9 10 ? , 1/8 w chip resistors rk73h2attd10r0f koa speer r4, r5, r6, r7 8.25 k ? , 1/10 w chip resistors rk73h1jttd8251f koa speer r10 50 ? , 10 w sm chip power resistor 81a7031--50--5f florida rf labs z1, z2 900 mhz band, 90 ? , 3 db chip hybrid couplers gsc362--hyb0900 soshin pcb rogers ro4350b, 0.030 ? , ? r =3.66 ? mtl
mmrf2007n MMRF2007GN 5 rf device data freescale semiconductor, inc. typical characteristics 820 g ps imd f, frequency (mhz) figure 4. two--tone broadband performance @p out = 35 watts avg. 26 36 35 34 -- 3 2 44 42 40 38 -- 2 7 -- 2 8 -- 2 9 -- 3 0 pae, power added efficiency (%) g ps , power gain (db) 33 32 31 30 29 28 27 840 860 880 900 920 940 960 980 36 -- 3 1 imd, intermodulation distortion (dbc) v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma i dq2(a+b) = 550 ma, p out =35w(avg.) 200 khz tone spacing figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u pae figure 6. power gain, power added efficiency and intermodulation distortion products versus average output power 35 p out , output power (watts) 33 31 29 20 34 32 30 10 30 40 60 0 60 50 40 30 20 10 pae, power added efficiency (%) 50 imd imd, intermodulatio n distortion (dbc) -- 6 0 0 -- 1 0 -- 2 0 -- 4 0 -- 3 0 -- 5 0 g ps , power gain (db) g ps pae v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma i dq2(a+b) = 550 ma, f1 = 939.9 mhz, f2 = 940.1 mhz v dd1 =28vdc,v dd2 =25vdc,p out = 71 w (pep) i dq1(a+b) =60ma,i dq2(a+b) = 550 ma two--tone measurements (f1 + f2)/2 = center frequency of 900 mhz
6 rf device data freescale semiconductor, inc. mmrf2007n MMRF2007GN typical characteristics 1 g ps imd p out , output power (watts) avg. figure 7. power gain, power added efficiency and intermodulation distortion products versus output power -- 2 0 -- 3 0 24 36 0 60 50 40 30 20 pae, power added efficiency (%) g ps , power gain (db) 34 32 10 100 10 -- 7 0 30 28 26 -- 1 0 -- 4 0 -- 5 0 -- 6 0 figure 8. broadband frequency response 24 36 700 f, frequency (mhz) 32 30 28 750 gain (db) 34 gain 800 850 900 950 1000 1050 1100 26 pae imd, intermodulatio n distortion (dbc) 850 mhz 900 mhz 940 mhz v dd1 =28vdc,v dd2 =25vdc p in =0dbm,i dq1(a+b) =60ma i dq2(a+b) = 550 ma v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma i dq2(a+b) = 550 ma, 200 khz tone spacing 850 mhz 900 mhz 940 mhz
mmrf2007n MMRF2007GN 7 rf device data freescale semiconductor, inc. f mhz z in ? z load ? 820 18.4 -- j13.0 11.3 + j20.0 840 18.8 -- j12.7 11.7 + j21.9 860 19.1 -- j12.9 12.1 + j23.4 880 19.1 -- j13.2 12.5 + j24.5 900 18.7 -- j13.6 12.7 + j25.1 920 18.0 -- j13.9 12.5 + j25.6 940 17.2 -- j14.2 11.8 + j26.0 960 16.1 -- j14.3 10.9 + j26.6 980 14.6 -- j14.3 9.6 + j27.4 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 330 31.2 -- j21.5 16.2 + j57.8 350 33.6 -- j18.7 24.2 + j59.6 370 35.8 -- j18.8 29.8 + j55.6 390 36.4 -- j19.6 29.0 + j52.8 410 37.0 -- j20.1 27.8 + j54.7 430 37.7 -- j21.7 30.2 + j58.5 450 36.2 -- j24.8 38.8 + j59.1 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 120 42.7 -- j27.4 47.3 + j80.0 130 40.0 -- j22.5 61.4 + j93.3 140 40.2 -- j16.0 84.0 + j104.2 150 43.8 -- j13.3 114.5 + j107.2 160 47.8 -- j10.0 147.2 + j98.5 170 51.5 -- j10.0 179.4 + j81.3 180 54.9 -- j10.6 215.9 + j53.3 190 58.2 -- j12.9 256.6 -- j7.6 200 59.6 -- j16.9 233.3 -- j109.9 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent input and load impedance ? stage 1 z in z load device under test output matching network note: measurement made on a per side basis.
8 rf device data freescale semiconductor, inc. mmrf2007n MMRF2007GN f mhz z in ? z load ? 820 9.49 + j10.2 3.19 + j1.99 840 10.3 + j10.3 3.29 + j2.11 860 11.2 + j10.2 3.39 + j2.18 880 12.2 + j9.89 3.45 + j2.20 900 13.1 + j9.34 3.46 + j2.16 920 14.0 + j8.53 3.40 + j2.08 940 14.6 + j7.51 3.24 + j2.00 960 15.1 + j6.28 2.98 + j1.96 980 15.2 + j4.87 2.66 + j1.99 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 330 5.78 + j3.02 5.53 + j1.53 350 5.73 + j3.40 6.27 + j1.77 370 5.66 + j3.89 6.95 + j1.55 390 5.63 + j4.34 7.18 + j0.90 410 5.60 + j4.75 6.67 + j0.22 430 5.53 + j5.06 5.61 + j0.05 450 5.38 + j5.32 4.45 + j0.57 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 120 5.47 -- j0.60 5.74 + j2.70 130 5.46 -- j0.36 6.36 + j1.97 140 5.47 -- j0.13 6.21 + j1.37 150 5.47 + j0.11 5.95 + j1.37 160 5.46 + j0.35 6.09 + j1.63 170 5.43 + j0.56 6.59 + j1.58 180 5.42 + j0.75 6.70 + j0.92 190 5.49 + j0.93 5.73 + j0.82 200 5.42 + j1.05 4.83 + j2.57 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 10. series equivalent input and load impedance ? stage 2 z in z load device under test output matching network note: measurement made on a per side basis.
mmrf2007n MMRF2007GN 9 rf device data freescale semiconductor, inc. load pull characteristics ? stage 2 v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max p out p1db dbm w 850 10.9 + j10.2 3.34 + j2.16 47.1 51 940 14.6 + j7.51 3.24 + j2.00 46.8 48 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 11. single side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max eff. p1db % 850 10.9 + j10.2 3.36 + j3.93 66.2 940 14.6 + j7.51 2.95 + j3.66 62.1 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 12. single side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max p out p1db dbm w 430 5.53 + j5.06 5.61 + j0.05 46.8 48 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 13. single side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max eff. p1db % 430 5.53 + j5.06 5.96 + j2.65 66.1 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 14. single side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner
10 rf device data freescale semiconductor, inc. mmrf2007n MMRF2007GN package dimensions
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16 rf device data freescale semiconductor, inc. mmrf2007n MMRF2007GN product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 june 2015 ? initial release of data sheet
mmrf2007n MMRF2007GN 17 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: mmrf2007n rev. 0, 6/2015

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